Hydrogen-Surfactant Mediated Growth of Ge on Si(001)
نویسندگان
چکیده
S.-J. Kahng,1 Y. H. Ha,2 J.-Y. Park,1 S. Kim,2 D. W. Moon,3 and Y. Kuk1,* 1Center for Science in Nanometer Scale and Department of Physics, Seoul National University, Seoul, 151-742, Korea 2Department of Chemistry, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea 3Surface Analysis Group, Korea Research Institute of Standards and Science, Taejon, 305-606, Korea (Received 27 February 1998)
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